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64KX1 DIP-16 Dram 150NS

View 4164-150: 64KX1 DIP-16 Dram 150NS (Memory)

4164-150: 64KX1 DIP-16 Dram 150NS (Memory)

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Jameco Part no. 41662
Manufacturer   MAJOR BRANDS
Manufacturer no. 4164-150
Catalog 152 , page 6
Learn more about Major Brands.
Pricing & Availability


# of Unit Price
1+ $0.99
10+ $0.89
100+ $0.79
  • Availability:Ship  1 Days ARO 

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64KX1 DRAM 150NS


The HYB 4164 is a 65536-words by 1-bit, MOS random access memory circuit fabricated with 5-Volt only N-Channel silicon gate technology, using double layer polysilicon. To protect the chip against alpha radiation a proprietary chip cover is used. The HYB uses single transistor dynamic storage cells and dynamic control circuitry to achieve high speed at very low power dissipation.

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