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Transistor General Purpose BJT NPN 60 Volt 10 Amp 3 Pin 3+ Tab TO-220 Ampb Rail

View MJE3055T: GP BJT Silicon Plastic Power Transistors DC Current Gain Specified to 10A

MJE3055T: GP BJT Silicon Plastic Power Transistors DC Current Gain Specified to 10A

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Jameco Part no. 25857
Manufacturer   MAJOR BRANDS
Manufacturer no. MJE3055T
Catalog 161 , page 13
Learn more about Major Brands.
Pricing & Availability


# of Unit Price
1+ $0.65
10+ $0.55
100+ $0.45
500+ $0.39
1000+ $0.35
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Silicon Plastic Power Transistors


  • DC current gain specified to 10A
  • Maximum collector-emitter voltage: 60Vdc
  • Maximum collector-base voltage: 70Vdc
  • Maximum emitter-base voltage: 5.0Vdc
  • Maximum collector current: 10Adc
  • Maximum base current: 6.0Adc
  • Maximum power dissipation: 75000mW
  • Operating temperature range: -55°C to 150°C
  • Dimensions: 10.28mm (L) x 4.82mm (W) x 9.28mm (H) (max)

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  • Specification Value
    Maximum Collector Emitter Voltage60V
    Maximum Emitter Base Voltage5V
    Minimum DC Current Gain20@4A@4V, 5@10A@4V
    Maximum Operating Frequency2MHz(Min)
    Maximum DC Collector Current10A
    Minimum Operating Temperature-55°C
    Maximum Operating Temperature150°C
    MountingThrough Hole
    Specification Value
    Product Width4.82mm(Max)
    Product Height9.28mm(Max)
    Product Length10.28mm(Max)
    Product TypeGP BJT
    CategoryBipolar Power
    Maximum Power Dissipation75000mW
    Maximum Collector Base Voltage70V
    Maximum Collector Emitter Saturation Voltage1.1V@0.4A@4A, 8V@3.3A@10A
    Number of Elements per Chip1

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