Photo Transistor T1 Radial .125" Dia [email protected] 800Nm 150Mw

$0.25 ea


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# of units Price
1+ $0.25
10+ $0.19
100+ $0.15
1000+ $0.10

T1 Phototransistor


Features:
  • Size: 3mm diameter
  • Forward voltage: 5.0V
  • Forward current: 30mA
  • Wavelength: 800nm
  • Power dissipation: 150mW

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  • Specification Value
    FamilyRPT 38
    TypeChip
    Number of Channels per Chip1
    Phototransistor TypePhototransistor
    PolarityNPN
    Peak Wavelength800nm
    Maximum Collector Current30mA
    Maximum Dark Current500nA
    Maximum Light Current2000uA(Min)
    Maximum Emitter Collector Voltage5V
    Maximum Rise Time10000ns(Typ)
    Maximum Fall Time10000ns(Typ)
    Maximum Power Dissipation150mW
    Maximum Collector Emitter Saturation Voltage0.4V
    Maximum Collector Emitter Voltage32V
    Minimum Operating Temperature-25C
    Maximum Operating Temperature85C
    MountingThrough Hole
    Pin_Count2
    Supplier_PackageT-1
    Package MaterialSilicon
    Product Width3.4mm
    Product Height5.2mm
    Product Length3.4mm
    Product TypePhototransistor
    Half Intensity Angle Degrees72


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