IRLB8721 HEXFET® Power N-Channel MOSFET

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IRLB8721 HEXFET® Power N-Channel MOSFET

Applications & Benefits

  • Optimized for UPS/Inverter applications
  • High frequency synchronous buck converters for computer processor power
  • High frequency isolated DC-DC converters with synchronous rectification for Telecom and Industrial use
  • Very low RDS(on) at 4.5 VGS
  • Ultra-low gate impedance
  • Fully characterized avalanche voltage

Specifications

  • TO-220AB package
  • VDSS: 30V
  • ID: 62A @ TC=25°C, 44A @ TC=100°C
  • RDS(on) max: 8.7mΩ@VGS = 10V
  • Qg (typ.): 7.6nC


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Specification Value
Supplier PackageTO-220-3
Transistor PolarityN
Maximum Drain Source Voltage30 V
Maximum Continuous Drain Current62 A
Maximum Gate Source Voltage±20V
Maximum Power Dissipation65000mW
Number of Elements per Chip1
Peak Forward Voltage30VDC
Output Power65W
Peak Non-Repetitive Surge Current250A
Peak Reverse Current1uA
Channel ModeN-Channel Enhancement
Peak Reverse Recovery Time93ns
Channel TypeN
Peak Reverse Repetitive Voltage30VDC
ConfigurationSingle
Maximum Drain Source Resistance8.7 [email protected]
CategoryPower MOSFET
Maximum Continuous Forward Current62A
Typical Fall Time17ns
Typical Gate Charge @ Vgs[email protected]
Typical Input Capacitance @ Vds[email protected]
Typical Rise Time93ns
Typical Turn-Off Delay Time9ns
Typical Turn-On Delay Time9.1ns
Minimum Operating Temperature-55°C
Maximum Operating Temperature175°C
MountingThrough Hole
PackagingBulk
Pin_Count3
FamilyIRLB
Product Width4.57mm
Product Height9.02mm
Product Length10.28mm
Product TypeMOSFET


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