Bipolar Junction Transistor (BJT) Array 4 PNP 40V 200mA 1W SOIC-16

Bipolar Junction Transistor (BJT) Array 4 PNP 40V 200mA 1W SOIC-16

Specifications

• Transistor Type: 4 PNP (Quad)
• Current - Collector (Ic) (Max): 200 mA
• Voltage - Collector Emitter Breakdown (Max): 40 V
• Vce Saturation (Max) @ Ib, Ic: 400 mV @ 5 mA, 50 mA
• Current - Collector Cutoff (Max): N/A
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10 mA, 1 V
• Power - Max: 1 W
• Frequency - Transition: 200 MHz
• Operating Temperature: -55°C to 150°C (TJ)
• Mounting Type: Surface Mount
• Package: SOIC-16 (0.154", 3.9mm W)
• Base Number: MMPQ3906