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MOSFET P-Channel 55V 31A (Tc) 110W (Tc) Through Hole IPAK TO-251

Infineon Technologies
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MOSFET P-Channel 55V 31A (Tc) 110W (Tc) Through Hole IPAK TO-251

Specifications

  • Series: HEXFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55 V
  • Current - Continuous Drain (Id) @ 25°C: 31 A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10 V
  • Rds On (Max) @ Id, Vgs: 65 mOhm @ 16 A, 10 V
  • Vgs(th) (Max) @ Id: 4 V @ 250 µA
  • Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
  • Vgs (Max): ±20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
  • Power Dissipation (Max): 110 W (Tc)
  • Operating Temperature: -55°C to 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Package: IPAK (TO-251), TO-251-3 Short Leads, TO-251AA


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Specification Value
Supplier PackageTO-251AA
Transistor PolarityP
Maximum Drain Source Voltage55 V
Maximum Continuous Drain Current31 A
Maximum Gate Source Voltage±20V
Maximum Power Dissipation110 W
Number of Elements per Chip1


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