Transistor MOSFET N-Channel 75V 170A 330W Through Hole TO-220AB

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Transistor MOSFET N-Channel 75V 170A 330W Through Hole TO-220AB

Specifications

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Current - Continuous Drain (Id) @ 25°C: 170 A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10 V
  • Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 75 A, 10 V
  • Vgs(th) (Max) @ Id: 4 V @ 25 0µA
  • Vgs (Max): ±20 V
  • Drain to Source Voltage (Vdss): 75 V
  • Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 50 V
  • Power Dissipation (Max): 330 W (Tc)
  • Operating Temperature: -55°C to 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB, TO-220-3


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Specification Value
PackageTO-220-3
Transistor PolarityN
Maximum Drain Source Voltage75 V
Maximum Continuous Drain Current170 A
Maximum Gate Source Voltage±20V
Power Dissipation300 W
Number of Elements per Chip1


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