Transistor 2N1893 Bipolar NPN General Purpose 80V 0.5A TO-39

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  • This item is discontinued and is not
    recommended for new designs.
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80V 0.5A Bipolar NPN Transistor TO-39


  • Bipolar (BJT) transistor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 5V @ 15mA, 150mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 800mW
  • Frequency - Transition: 70MHz
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-39-3 Metal Can

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Specification Value
Supplier PackageTO-39-3
Transistor PolarityNPN
Maximum Collector Emitter Voltage80V
Maximum Collector Base Voltage140V
Minimum DC Current Gain40 @ .15A
Maximum Power Dissipation0.8W
Maximum Collector Emitter Saturation Voltage[email protected]
Number of Elements per Chip1
Output Power3W
CategoryBipolar Power
Maximum Emitter Base Voltage7.0V
Maximum Base Emitter Saturation Voltage[email protected]
Maximum Operating Frequency50Mhz
Maximum DC Collector Current500mA
Minimum Operating Temperature-65°C
Maximum Operating Temperature200°C
MountingThrough Hole
Product Width9.4mm
Product Height6.6mm
Product Length9.4mm
Product TypeGP BJT

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