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Transistor 2N2218 Bipolar NPN 40V 0.8A TO-39

New Jersey Semiconductor
2N2218

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40V 0.8A Bipolar NPN Transistor TO-39

Specifications

  • Bipolar (BJT) transistor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 800mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: -65°C to 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-39-3 Metal Can


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Specification Value
Supplier PackageTO-39-3
Transistor PolarityNPN
Maximum Collector Emitter Voltage40V
Maximum Collector Base Voltage75V
Minimum DC Current Gain40 @ .15A
Maximum Power Dissipation800mW
ConfigurationSingle
CategoryBipolar Small Signal
Maximum Base Emitter Saturation Voltage[email protected]
Maximum DC Collector Current150mA
Minimum Operating Temperature-65°C
Maximum Operating Temperature200°C
MountingThrough Hole
PackagingBulk
Pin_Count3
Family2N2218
Product Width9.4mm
Product Height6.6mm
Product Length9.4mm
Product TypeGP BJT


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