30V 0.8A Bipolar NPN Transistor TO-18

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30V 0.8A Bipolar NPN Transistor TO-18


  • Bipolar (BJT) transistor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • Power - Max: 500mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C to 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-18-3 Metal Can

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Specification Value
Transistor PolarityNPN
Maximum Collector Emitter Voltage50 V
Maximum Collector Base Voltage75 V
Minimum DC Current Gain35 @ .01A
Power Dissipation500mW
Maximum Collector Emitter Saturation Voltage1.0V @ 50mA @ 500mA
Number of Elements per Chip1
Output Power500mW
CategoryBipolar Small Signal
Maximum Emitter Base Voltage6V
Maximum Operating Frequency250MHz
Maximum Collector Current800mA
Minimum Operating Temperature-65°C
Maximum Operating Temperature200°C
MountingThrough Hole
Width5.80 mm
Height5.30 mm
Length5.80 mm
Product TypeGP BJT

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