Transistor 2N2369 Bipolar NPN TO-18

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15V 0.2A Bipolar NPN Transistor TO-18

Specifications

  • Bipolar (BJT) transistor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 400nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 350mV
  • Power - Max: 360mW
  • Frequency - Transition: 500MHz
  • Operating Temperature: -65°C to 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-18-3 Metal Can


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Specification Value
Supplier PackageTO-18-3
Transistor PolarityNPN
Maximum Collector Emitter Voltage15V
Maximum Collector Base Voltage40V
Minimum DC Current Gain40 @ .01A
Maximum Power Dissipation1.2W
ConfigurationSingle
Maximum Collector Emitter Saturation Voltage0.50V
Number of Elements per Chip1
Output Power1.2W
CategoryBipolar Small Signal
Maximum Emitter Base Voltage4.5V
Maximum Base Emitter Saturation Voltage1.6V
Maximum Operating Frequency500Mhz
Maximum DC Collector Current200mA
Minimum Operating Temperature-55°C
Maximum Operating Temperature200°C
MountingThrough Hole
PackagingBulk
Pin_Count3
Family2N2369
Product Width5.8mm
Product Height5.3mm
Product Length5.8mm
Product TypeGP BJT


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