Transistor 2N2094 PNP Switching Bipolar -60V -0.6A TO-39

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60V 0.6A Bipolar PNP Transistor TO-39

Specifications

  • Bipolar (BJT) transistor
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 150mA, 10V
  • Power - Max: 600mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: -65°C to 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-39-3 Metal Can


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Specification Value
PackageTO-39-3
Transistor PolarityPNP
Maximum Collector Emitter Voltage60 V
Maximum Collector Base Voltage60 V
Minimum DC Current Gain120 @ .15A
Power Dissipation3W
ConfigurationSingle
Maximum Collector Emitter Saturation Voltage-1.6V
Number of Elements per Chip1
Output Power3W
CategoryBipolar Small Signal
Maximum Emitter Base Voltage-5V
Maximum Base Emitter Saturation Voltage-2.6V
Maximum Operating Frequency200Mhz
Maximum Collector Current-600mA
Minimum Operating Temperature-65°C
Maximum Operating Temperature200°C
MountingThrough Hole
PackagingBulk
Pins3
Family2N2904
Width5.80 mm
Height5.30 mm
Length5.80 mm
Product TypeGP BJT


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