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Transistor 2N3496 Bipolar PNP 80V 0.01A TO-18

New Jersey Semiconductor
2N3496

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80V 0.01A Bipolar PNP Transistor TO-18

Specifications

  • Bipolar (BJT) transistor
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 10mA
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 0.3V @ 10mA, 500mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
  • Frequency - Transition: 200MHz
  • Operating Temperature: -65°C to 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-18-3 Metal Can


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Specification Value
Supplier PackageTO-18-3
Transistor PolarityPNP
Maximum Collector Emitter Voltage80V
Maximum Collector Base Voltage80V
Minimum DC Current Gain40 @ .01A
Maximum Power Dissipation600mW
ConfigurationSingle
CategoryBipolar Small Signal
Maximum Base Emitter Saturation Voltage0.9V
Maximum DC Collector Current100mA
Minimum Operating Temperature-65°C
Maximum Operating Temperature200°C
MountingThrough Hole
PackagingBulk
Pin_Count3
Family2N3496
Product Width5.8mm
Product Height5.3mm
Product Length5.8mm
Product TypeGP BJT


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