Transistor 2N3700 NPN General Purpose Amplifier 80V 1A TO-18

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80V 1A Bipolar NPN Transistor TO-18

Specifications

  • Bipolar (BJT) transistor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
  • Power - Max: 500mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C to 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-18-3 Metal Can


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Specification Value
PackageTO-18-3
Transistor PolarityNPN
Maximum Collector Emitter Voltage80 V
Maximum Collector Base Voltage140 V
Minimum DC Current Gain50 @ .5A
Power Dissipation1.8W
ConfigurationSingle
Maximum Collector Emitter Saturation Voltage[email protected]
Number of Elements per Chip1
Output Power1.8W
CategoryBipolar Small Signal
Maximum Emitter Base Voltage7V
Maximum Base Emitter Saturation Voltage1.1V
Maximum Collector Current1A
Minimum Operating Temperature-65°C
Maximum Operating Temperature200°C
MountingThrough Hole
PackagingBulk
Pins3
Family2N3700
Width5.80 mm
Height5.30 mm
Length5.80 mm
Product TypeGP BJT


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