Specification | Value |
---|---|
Package | TO-92-3 |
Transistor Polarity | NPN |
Maximum Collector Emitter Voltage | 40 V |
Maximum Collector Base Voltage | 60 V |
Minimum DC Current Gain | 100 @ .01A |
Power Dissipation | 625mW |
Configuration | Single |
Maximum Collector Emitter Saturation Voltage | 0.3V @ 5mA @ 50mA |
Number of Elements per Chip | 1 |
Category | Silicon Epitaxial Planar |
Maximum Emitter Base Voltage | 6V |
Maximum Base Emitter Saturation Voltage | 0.95V @ 5mA @ 50mA |
Maximum Operating Frequency | 300MHz |
Maximum Collector Current | 0.20A |
Minimum Operating Temperature | -55°C |
Maximum Operating Temperature | 150°C |
Mounting | Through Hole |
Packaging | Bulk |
Pins | 3 |
Family | 2N3904 |
Width | 4.19 mm |
Height | 5.33 mm |
Length | 5.21 mm |
Product Type | Silicon Epitaxial Planar |