Transistor General Purpose BJT NPN 40V 200mA TO-92-3 (Tape/Reel/Ammo)

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NPN General Purpose Amplifier

This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100mA as a switch and to 100 MHz as an amplifier.


  • Collector-Emitter Voltage: 40V
  • Collector-Base Voltage: 60V
  • Emitter-Base Voltage: 6V
  • Collector Current - Continuous: 200mA
  • Operating and Storage Junction Temperature Range: -55°C to +150°C
  • Power dissipation: 625mW
  • Collector-Emitter Breakdown Voltage: 40V
  • 3-pin package

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Specification Value
Transistor PolarityNPN
Maximum Collector Emitter Voltage40V
Maximum Collector Base Voltage60V
Minimum DC Current Gain100 @ .01A
Maximum Power Dissipation625mW
Maximum Collector Emitter Saturation Voltage[email protected]@10mA, [email protected]@50mA
Number of Elements per Chip1
Output Power200mA
CategoryBipolar Small Signal
Maximum Emitter Base Voltage6V
Maximum Base Emitter Saturation Voltage[email protected]@10mA, [email protected]@50mA
Maximum Operating Frequency300MHz
Maximum DC Collector Current0.2A
Minimum Operating Temperature-55°C
Maximum Operating Temperature150°C
MountingThrough Hole
Product Width3.93mm
Product Height4.7mm
Product Length4.7mm
Product TypeGP BJT

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