Transistor 2N4036 Bipolar PNP 65 Volt 1 Amp TO-39

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65V 1A Bipolar PNP Transistor TO-39


  • Bipolar (BJT) transistor
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 15mA, 150mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: 60MHz
  • Operating Temperature: -65°C to 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-39-3 Metal Can

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Specification Value
Transistor PolarityPNP
Maximum Collector Emitter Voltage65 V
Maximum Collector Base Voltage90 V
Minimum DC Current Gain40 @ .15A
Power Dissipation5W
Maximum Collector Emitter Saturation Voltage[email protected]
Number of Elements per Chip1
Output Power5W
CategoryBipolar Small Signal
Maximum Emitter Base Voltage-7V
Maximum Base Emitter Saturation Voltage-1.4V
Maximum Collector Current-1.0A
Minimum Operating Temperature-65°C
Maximum Operating Temperature200°C
MountingThrough Hole
Width9.40 mm
Height6.60 mm
Length9.40 mm
Product TypeGP BJT

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