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Transistor 2N4037 40V 1A Bipolar PNP TO-39

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2N4037

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40V 1A Bipolar PNP Transistor TO-39

Specifications

  • Bipolar (BJT) transistor
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1.4V @ 15mA, 150mA
  • Current - Collector Cutoff (Max): 250nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: 60MHz
  • Operating Temperature: -65°C to 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-39-3 Metal Can


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Specification Value
PackageTO-39-3
Transistor PolarityPNP
Maximum Collector Emitter Voltage40 V
Maximum Collector Base Voltage60 V
Minimum DC Current Gain50 @ .15A
Power Dissipation5W
ConfigurationSingle
Maximum Collector Emitter Saturation Voltage-1.4V
Number of Elements per Chip1
Output Power5W
CategoryBipolar Power
Maximum Emitter Base Voltage-7V
Maximum Base Emitter Saturation Voltage-1.4V
Maximum Collector Current-1A
Minimum Operating Temperature-65°C
Maximum Operating Temperature200°C
MountingThrough Hole
PackagingBulk
Pins3
Family2N4037
Width9.40 mm
Height6.60 mm
Length9.40 mm
Product TypeGP BJT


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