Silicon PNP Epitaxial BJT Bipolar Transistor 200V 15A

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$3.95 ea

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50 In Stock

  • Jameco Part no.: 2286047
  • Manufacturer: Toshiba
  • Manufacturer no.: 2SA1302-0
  • HTS code: 8541210080
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Silicon PNP Epitaxial BJT Bipolar Transistor 200V 15A


  • Collector-Emitter Voltage: -200V
  • Collector Current: -15A
  • Emitter-Base Voltage: -5V
  • Power Dissipation: 150W
  • Operating Temperature: -55°C to 150°C

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Specification Value
Transistor PolarityPNP
Maximum Collector Emitter Voltage200 V
Maximum Collector Base Voltage200 V
Minimum DC Current Gain55 @ 1mA
Power Dissipation150W
Maximum Collector Emitter Saturation Voltage-3.0V @ -1A @ -10A
Number of Elements per Chip1
Output Power150W
CategorySilicon Epitaxial Planar
Maximum Emitter Base Voltage-5V
Maximum Operating Frequency25Mhz
Maximum Collector Current15A
Minimum Operating Temperature-55°C
Maximum Operating Temperature150°C
MountingThrough Hole
Width4.19 mm
Height5.33 mm
Length5.21 mm
Product TypeGP BJT

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