800V 8A Power N Channel Silicon Power MOSFET Transistor

$0.69 ea

10% discount applied in cart

Specification	Value
Package	TO-247-3
Transistor Polarity	N
Maximum Drain Source Voltage	800 V
Maximum Continuous Drain Current	9 A
Maximum Gate Source Voltage	±30V
Power Dissipation	150 W
Number of Elements per Chip	1
Maximum Forward Voltage	800VDC
Output Power	150W
Peak Non-Repetitive Surge Current	26A
Maximum Reverse Current	500uA
Channel Mode	N-Channel Enhancement
Peak Reverse Recovery Time	1000ns
Channel Type	N
Repetitive Peak Reverse Voltage	800VDC
Configuration	Single
Maximum Drain Source Resistance	1.5 [email protected]
Category	Power MOSFET
Maximum Forward Current	9A
Typical Fall Time	300ns
Typical Input Capacitance @ Vds	[email protected]
Typical Rise Time	50ns
Typical Turn-Off Delay Time	300ns
Typical Turn-On Delay Time	50ns
Minimum Operating Temperature	-55°C
Maximum Operating Temperature	150°C
Mounting	Through Hole
Packaging	Bulk
Pins	3
Family	2SK
Width	10mm
Height	4.5mm
Product Length	15.0mm
Product Type	MOSFET