Vishay 41256P-10

DRAM 262144 Word x 1-Bit 100ns 5V DIP-16

Features

• 262,144 word x 1-bit organization
• NMOS technology
• Industry standard 16-pin DIP
• Single +5V supply, ±10% tolerance
• Low power dissipation (max.): 358 mW active; 28 mW standby
• 100 ns access time
• 200 ns cycle time
• All inputs and outputs are TTL-compatible
• On-chip substrate bias generator
• Tristate data output
• Read, write, read-modify-write, RAW-only refresh, hidden-refresh
• Common I/O capability using "early write" operation
• Page mode read and write, read-write
• 256 refresh cycles with 4 ms refresh period