# of units | Price |
---|---|
1+ | $0.39 |
10+ | $0.29 |
100+ | $0.22 |
500+ | $0.15 |
2000+ | $0.12 |
Specification | Value |
---|---|
Package | TO-92-3 |
Transistor Polarity | N |
Maximum Drain Source Voltage | 60 V |
Maximum Continuous Drain Current | 500 mA |
Maximum Gate Source Voltage | ±20V |
Power Dissipation | 830 mW |
Number of Elements per Chip | 1 |
Maximum Forward Voltage | 60VDC |
Output Power | 350mW |
Peak Non-Repetitive Surge Current | 1200mA |
Maximum Reverse Current | 10nA |
Channel Mode | N-Channel Enhancement |
Channel Type | N |
Repetitive Peak Reverse Voltage | 60VDC |
Configuration | Single |
Maximum Drain Source Resistance | 5 [email protected] |
Category | Power MOSFET |
Maximum Forward Current | 500mA |
Typical Fall Time | 10ns |
Typical Input Capacitance @ Vds | [email protected] |
Typical Rise Time | 4ns |
Typical Turn-Off Delay Time | 10ns |
Typical Turn-On Delay Time | 10ns |
Minimum Operating Temperature | -55°C |
Maximum Operating Temperature | 150°C |
Mounting | Through Hole |
Packaging | Bulk |
Pins | 3 |
Family | BS170 |
Width | 4.19 mm |
Height | 5.33 mm |
Length | 5.2 mm |
Product Type | MOSFET |