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IC DS1230Y-100 SRAM 256K-Bit (32Kx8) 100ns Non-Volitile

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32K X 8 NON-VOLATILE SRAM MODULE


The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

Features:
  • 10 years minimum data retention in the absence of external power
  • Data is automatically protected during power loss
  • Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory
  • Unlimited write cycles
  • Low-power CMOS
  • Read and write access times as fast as 70 ns
  • Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
  • Full ±10% VCC operating range
  • 28-pin PDIP package

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