Insulated Gate Bipolar Transistor (IGBT) with Ultrafast Soft Recovery Diode

Insulated Gate Bipolar Transistor (IGBT) with Ultrafast Soft Recovery Diode

Specifications

• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 30 A
• Current - Collector Pulsed (Icm): 60 A
• Vce(on) (Max) @ Vge, Ic: 3.4 V @ 15 V, 15 A
• Power - Max: 160 W
• Switching Energy: 1.31 mJ (on), 1.12 mJ (off)
• Input Type: Standard
• Gate Charge: 94nC
• Td (on/off) @ 25°C: 50 ns/96 ns
• Test Condition: 800 V, 15 A, 10 Ohm, 15 V
• Reverse Recovery Time (trr): 63 ns
• Operating Temperature: -55°C to 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247AC (TO-247-3)