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Transistor IRF510 MOSFET N Channel 100 Volt

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  • Jameco Part no.: 209234
  • Manufacturer: Major Brands
  • Manufacturer no.: IRF510
  • HTS code: 8541290080
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5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

  • Package: TO-220
  • 5.6A, 100V
  • rDS(ON)= 0.540Ω
  • Single Pulse Avalanche Energy Rated
  • SOA is Power Dissipation Limited
  • Nanosecond Switching Speeds
  • Linear Transfer Characteristics
  • High Input Impedance

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  • Specification Value
    Supplier PackageTO-220-3
    Transistor PolarityN
    Maximum Drain Source Voltage100 V
    Maximum Continuous Drain Current5.6 A
    Maximum Gate Source Voltage±20V
    Maximum Power Dissipation43 W
    Number of Elements per Chip1
    Peak Forward Voltage100VDC
    Output Power43W
    Peak Non-Repetitive Surge Current20A
    Peak Reverse Current25uA
    Channel ModeN-Channel Enhancement
    Peak Reverse Recovery Time100ns
    Channel TypeN
    Peak Reverse Repetitive Voltage100VDC
    Maximum Drain Source Resistance0.40 [email protected]
    CategoryPower MOSFET
    Maximum Continuous Forward Current5.6A
    Typical Fall Time12ns
    Typical Gate Charge @ Vgs[email protected]
    Typical Input Capacitance @ Vds[email protected]
    Typical Rise Time25ns
    Typical Turn-Off Delay Time15ns
    Typical Turn-On Delay Time8ns
    Minimum Operating Temperature-55°C
    Maximum Operating Temperature175°C
    MountingThrough Hole
    Product Width4.57mm
    Product Height9.02mm
    Product Length10.28mm
    Product TypeMOSFET

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