Transistor IRF630 MOSFET N Channel 200 Volt

$0.99 ea

TRANSISTOR, IRF630, N CHANNEL POWER MOSFET, 200V, 9A, TO-220

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Specification	Value
Package	TO-220-3
Transistor Polarity	N
Maximum Drain Source Voltage	200 V
Maximum Continuous Drain Current	9 A
Maximum Gate Source Voltage	±20V
Power Dissipation	75 W
Number of Elements per Chip	1
Maximum Forward Voltage	200VDC
Output Power	75W
Peak Non-Repetitive Surge Current	36A
Maximum Reverse Current	50uA
Channel Mode	N-Channel Enhancement
Peak Reverse Recovery Time	20ns
Channel Type	N
Repetitive Peak Reverse Voltage	200VDC
Configuration	Single
Maximum Drain Source Resistance	0.4 [email protected]
Category	Power MOSFET
Maximum Forward Current	9A
Typical Fall Time	20ns
Typical Gate Charge @ Vgs	[email protected]
Typical Input Capacitance @ Vds	[email protected]
Typical Rise Time	15ns
Typical Turn-Off Delay Time	17ns
Typical Turn-On Delay Time	10ns
Minimum Operating Temperature	-65°C
Maximum Operating Temperature	150°C
Mounting	Through Hole
Packaging	Tube
Pins	3
Family	IRF630
Width	4.6 mm
Height	9.15 mm
Length	10.4 mm
Product Type	MOSFET