Power MOSFET N-Channel 200V 18A (Tc) 125W (Tc) Through Hole TO-220

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  • Jameco Part no.: 210542
  • Manufacturer: Major Brands
  • Manufacturer no.: IRF640PBF
  • HTS code: 8541290080
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Power MOSFET N-Channel 200V 18A (Tc) 125W (Tc) Through Hole TO-220AB

Mesh Overlay™ Power MOSFET.


  • Series: MESH OVERLAY™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 18 A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10 V
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 9 A, 10 V
  • Vgs(th) (Max) @ Id: 4V @ 250 µA
  • Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 25 V
  • Power Dissipation (Max): 125 W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220, TO-220-3
  • Base Number: IRF6

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Specification Value
Transistor PolarityN
Maximum Drain Source Voltage200 V
Maximum Continuous Drain Current18 A
Maximum Gate Source Voltage±20V
Power Dissipation125 W
Number of Elements per Chip1
Maximum Forward Voltage200VDC
Output Power125W
Peak Non-Repetitive Surge Current72A
Maximum Reverse Current25uA
Channel ModeN-Channel Enhancement
Peak Reverse Recovery Time80ns
Channel TypeN
Repetitive Peak Reverse Voltage200VDC
Maximum Drain Source Resistance0.18 [email protected]
CategoryPower MOSFET
Maximum Forward Current18A
Typical Fall Time60ns
Typical Gate Charge @ Vgs[email protected]
Typical Input Capacitance @ Vds[email protected]
Typical Rise Time60ns
Typical Turn-Off Delay Time80ns
Typical Turn-On Delay Time30ns
Minimum Operating Temperature-55°C
Maximum Operating Temperature150°C
MountingThrough Hole
Width4.57 mm
Height9.02 mm
Length10.28 mm
Product TypeMOSFET

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