Transistor IRF820 N-Channel MOSFET 500 Volt 4 Amp TO-220

$1.15 ea

Specification	Value
Package	TO-220-3
Transistor Polarity	N
Maximum Drain Source Voltage	500 V
Maximum Continuous Drain Current	4 A
Maximum Gate Source Voltage	±30V
Power Dissipation	80 W
Number of Elements per Chip	1
Maximum Forward Voltage	500VDC
Output Power	80W
Peak Non-Repetitive Surge Current	12A
Maximum Reverse Current	50uA
Channel Mode	N-Channel Enhancement
Peak Reverse Recovery Time	20ns
Channel Type	N
Repetitive Peak Reverse Voltage	500VDC
Configuration	Single
Maximum Drain Source Resistance	3 [email protected]
Category	Power MOSFET
Maximum Forward Current	4A
Typical Fall Time	13ns
Typical Gate Charge @ Vgs	[email protected]
Typical Input Capacitance @ Vds	[email protected]
Typical Rise Time	13ns
Typical Turn-Off Delay Time	13ns
Typical Turn-On Delay Time	10ns
Minimum Operating Temperature	-65°C
Maximum Operating Temperature	150°C
Mounting	Through Hole
Packaging	Bulk
Pins	3
Family	IRF820
Width	4.6mm
Height	9.15mm
Product Length	10.4mm
Product Type	MOSFET