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Transistor IRF9630PBF MOSFET P-Channel 200 Volt 6.5 Amp TO-220

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P-Channel Fast Switching Power MOSFET Transistor

Features:

  • Package Type: TO-220
  • Drain-to-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 6.5A
  • Gate-to-Source Voltage: ±20V
  • Power Dissipation: 74W
  • Input Capacitance: 700pF
  • Avalanche Current: 6.4A


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Specification Value
Supplier PackageTO-220-3
Transistor PolarityP
Maximum Drain Source Voltage-200 V
Maximum Continuous Drain Current-6.5 A
Maximum Gate Source Voltage±20V
Maximum Power Dissipation74 W
Number of Elements per Chip1
Peak Forward Voltage-200VDC
Output Power74W
Peak Non-Repetitive Surge Current-26A
Peak Reverse Current-500uA
Channel ModeP-Channel Enhancement
Peak Reverse Recovery Time28ns
Channel TypeP
Peak Reverse Repetitive Voltage-200VDC
ConfigurationSingle
Maximum Drain Source Resistance0.8 [email protected]
CategoryPower MOSFET
Maximum Continuous Forward Current-6.5A
Typical Fall Time24ns
Typical Gate Charge @ Vgs29nC @10V
Typical Input Capacitance @ Vds[email protected]
Typical Rise Time27ns
Typical Turn-Off Delay Time28ns
Typical Turn-On Delay Time12ns
Minimum Operating Temperature-55°C
Maximum Operating Temperature150°C
MountingThrough Hole
PackagingBulk
Pin_Count3
FamilyIRF
Product Width4.7mm
Product Height8.76mm
Product Length10.54mm
Product TypeMOSFET


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