Transistor MOSFET N-Channel 75V 170A 330W Through Hole TO-220AB

Transistor MOSFET N-Channel 75V 170A 330W Through Hole TO-220AB

Specifications

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Current - Continuous Drain (Id) @ 25°C: 170 A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10 V
• Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 75 A, 10 V
• Vgs(th) (Max) @ Id: 4 V @ 25 0µA
• Vgs (Max): ±20 V
• Drain to Source Voltage (Vdss): 75 V
• Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 50 V
• Power Dissipation (Max): 330 W (Tc)
• Operating Temperature: -55°C to 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB, TO-220-3