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MOSFET N-Channel 200V 130A (Tc) 520W (Tc) Through Hole TO-247AC

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MOSFET N-Channel 200V 130A (Tc) 520W (Tc) Through Hole TO-247AC

Specifications

  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 130 A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10 V
  • Rds On (Max) @ Id, Vgs: 9.7 mOhm @ 81 A, 10 V
  • Vgs(th) (Max) @ Id: 5 V @ 250 µA
  • Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V
  • Vgs (Max): ±30 V
  • Input Capacitance (Ciss) (Max) @ Vds: 10720 pF @ 50 V
  • Power Dissipation (Max): 520 W (Tc)
  • Operating Temperature: -55°C to 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Package: TO-247AC, TO-247-3


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Specification Value
Supplier PackageTO-247-3
Transistor PolarityN
Maximum Drain Source Voltage200 V
Maximum Continuous Drain Current130 A
Maximum Gate Source Voltage±30V
Maximum Power Dissipation520 W
Number of Elements per Chip1


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