HEXFET Power MOSFET N-Channel 800V 7.8A (Tc) TO-247-3

HEXFET Power MOSFET N-Channel 800V 7.8A (Tc) TO-247-3

Specifications

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800 V
• Current - Continuous Drain (Id) @ 25°C: 7.8 A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10 V
• Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 4.7 A, 10 V
• Vgs(th) (Max) @ Id: 4 V @ 250 µA
• Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
• Vgs (Max): ±20 V
• Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
• Power Dissipation (Max): 190 W (Tc)
• Operating Temperature: -55°C to 150°C (TJ)
• Mounting Type: Through Hole
• Package: TO-247-3