Bipolar Junction Transistor (BJT) PNP Darlington 100V 8A 75W TO-225AB

Bipolar Junction Transistor (BJT) PNP Darlington 100V 8A 75W TO-225AB

Specifications

• Transistor Type: PNP Darlington
• Current - Collector (Ic) (Max): 8 A
• Voltage - Collector Emitter Breakdown (Max): 100 V
• Vce Saturation (Max) @ Ib, Ic: 2 V @ 12 mA, 3 A
• Current - Collector Cutoff (Max): 500 micro;A
• DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3 A, 4 V
• Power - Max: 75 W
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package: TO-225AB
• Base Number: MJE6042