Bipolar Transistor (BJT) NPN-Darlington 80V 4A 40W Through Hole TO-225AA

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$0.69 ea

122 In Stock


  • Jameco Part no.: 2313551
  • Manufacturer: On Semiconductor
  • Manufacturer no.: MJE803G
  • HTS code: 8541210040
  • Web Exclusive
# of units Price
1+ $0.69
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100+ $0.459
500+ $0.39

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Bipolar Transistor (BJT) NPN-Darlington 80V 4A 40W Through Hole TO-225AA

Specifications

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 4 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 2.8 V @ 40 mA, 2 A
  • Current - Collector Cutoff (Max): 100 µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2 A, 3 V
  • Power - Max: 40 W
  • Frequency - Transition: n/a
  • Operating Temperature: -55°C to 150°C (TJ)
  • Mounting Type: Through Hole
  • Package: TO-225AA, TO-126-3
  • Base Number: MJE803


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Specification Value
PackageTO-225-3
Transistor PolarityNPN - Darlington
Maximum Collector Emitter Voltage80 V
Maximum Collector Base Voltage80 V
Minimum DC Current Gain750 @ 4A, 3V
Maximum Collector Cut-off Current100uA
Maximum Collector Emitter Saturation Voltage[email protected]@40mA
ConfigurationSingle
Maximum Collector Current4A
Maximum Emitter Base Voltage5V


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