Bipolar Transistor (BJT) NPN-Darlington 80V 4A 40W Through Hole TO-225AA

Bipolar Transistor (BJT) NPN-Darlington 80V 4A 40W Through Hole TO-225AA

Specifications

• Transistor Type: NPN - Darlington
• Current - Collector (Ic) (Max): 4 A
• Voltage - Collector Emitter Breakdown (Max): 80 V
• Vce Saturation (Max) @ Ib, Ic: 2.8 V @ 40 mA, 2 A
• Current - Collector Cutoff (Max): 100 µA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2 A, 3 V
• Power - Max: 40 W
• Frequency - Transition: n/a
• Operating Temperature: -55°C to 150°C (TJ)
• Mounting Type: Through Hole
• Package: TO-225AA, TO-126-3
• Base Number: MJE803