Bipolar Junction Transistor (BJT) PNP 60V 600mA 1W SOT-223

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Bipolar Junction Transistor (BJT) PNP 60V 600mA 1W SOT-223


  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600 mA
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 1.6 V @ 50 mA, 500 mA
  • Current - Collector Cutoff (Max): 10 nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150 mA, 10 V
  • Power - Max: 1 W
  • Frequency - Transition: 200 MHz
  • Operating Temperature: -55°C to 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package: TO-261-4, TO-261AA, SOT-223

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Specification Value
Transistor PolarityPNP
Maximum Collector Emitter Voltage60V
Maximum Collector Base Voltage60V
Minimum DC Current Gain100 @ 150mA
Power Dissipation1W
Maximum Collector Emitter Saturation Voltage1.6V @ 50mA @ 500mA
Number of Elements per Chip1
Output Power1W
CategoryBipolar Small Signal
Maximum Emitter Base Voltage5V
Maximum Base Emitter Saturation Voltage2.6V @ 50mA @ 500mA
Maximum Operating Frequency200Mhz
Maximum Collector Current0.8A
Minimum Operating Temperature-55°C
Maximum Operating Temperature150°C
MountingSurface Mount
Width6.7 mm
Height6.2 mm
Length2.4 mm
Product TypeGP BJT

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