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Specification | Value |
---|---|
Package | TO-92 |
Transistor Polarity | PNP |
Maximum Collector Emitter Voltage | 25 V |
Maximum Collector Base Voltage | 40 V |
Minimum DC Current Gain | [email protected]@1V |
Power Dissipation | 1W |
Configuration | Single |
Maximum Collector Emitter Saturation Voltage | [email protected]@800mA |
Number of Elements per Chip | 1 |
Output Power | 1000mW |
Category | Bipolar Power |
Maximum Emitter Base Voltage | 6V |
Maximum Base Emitter Saturation Voltage | [email protected]@800mA |
Maximum Operating Frequency | 200MHz |
Maximum Collector Current | 1.5A |
Minimum Operating Temperature | -65°C |
Maximum Operating Temperature | 150°C |
Mounting | Through Hole |
Packaging | Bulk |
Pins | 3 |
Family | SS8550D |
Width | 4.19 mm |
Height | 5.33 mm |
Length | 5.20 mm |
Product Type | GP BJT |