Transistor BJT NPN 40V 6A TO-220AB

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Transistor BJT NPN 40V 6A TO-220AB

Features:

  • Collector-Emitter Voltage: 40V
  • Collector Current: 6V
  • Emitter-Base Voltage: 5V
  • Power Dissipation: 65W
  • Packaging: TO-220AB


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Specification Value
PackageTO-220-3
Transistor PolarityNPN
Maximum Collector Emitter Voltage40 V
Maximum Collector Base Voltage40 V
Minimum DC Current Gain15 @ 3A
Power Dissipation65W
ConfigurationSingle
Maximum Collector Emitter Saturation Voltage1.5V @ 600mA @ 6A
Number of Elements per Chip1
CategorySilicon Epitaxial Planar
Maximum Emitter Base Voltage5V
Maximum Operating Frequency3MHz
Maximum Collector Current6A
Minimum Operating Temperature-65°C
Maximum Operating Temperature150°C
MountingThrough Hole
PackagingBulk
Pins3
FamilyTIP41
Width4.83 mm
Height9.40 mm
Length10.67 mm
Product TypeSilicon Epitaxial Planar


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