IC 4416-12 SMOS DRAM 64K-Bit (16Kx4) 120ns 5V

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$2.95 ea

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405 In Stock
More Available – 7 weeks


  • Jameco Part no.: 2288023
  • Manufacturer: National Semiconductor
  • Manufacturer no.: TMS4416-12NL/MB81416-10
  • HTS code: 8542320015
  • Web Exclusive
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IC DRAM 16kx4 SMOS 120ns DIP-18

This is a Military high-speed, 65,536-bit dynamic random-access memory (DRAM) organized as 16,384 words of 4 bits each. I employs state-of-the-art SMOS (scaled MOS) N-channel double-level polysilicon gate technology for very high performance combined with low cost and improved reliability.

Features

  • 16,384 x 4 organization
  • Single +5V supply (±10% tolerance)
  • Access time for address: 120 ns (max.)
  • Access time column address: 70 ns (max.)
  • Read or write cycle: 230 ns (min.)
  • Read-modify-write cycle: 320 ns (min.)
  • 3-State unlatched outputs


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Specification Value
Organization16K x 4
PackageDIP-18


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