IC 4416-12 SMOS DRAM 64K-Bit (16Kx4) 120ns 5V

IC DRAM 16kx4 SMOS 120ns DIP-18

This is a Military high-speed, 65,536-bit dynamic random-access memory (DRAM) organized as 16,384 words of 4 bits each. I employs state-of-the-art SMOS (scaled MOS) N-channel double-level polysilicon gate technology for very high performance combined with low cost and improved reliability.

Features

• 16,384 x 4 organization
• Single +5V supply (±10% tolerance)
• Access time for address: 120 ns (max.)
• Access time column address: 70 ns (max.)
• Read or write cycle: 230 ns (min.)
• Read-modify-write cycle: 320 ns (min.)
• 3-State unlatched outputs