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TRANSISTOR,IRF510,MOSFET,N-CHANNEL,100V
Image is representative only
| Jameco Part no. 209234 | |
|---|---|
| Manufacturer | MAJOR BRANDS |
| Manufacturer no. | IRF510 |
| Catalog 132 , page 16 |
- Fairchild Semiconductors [130 KB ]
- International Rectifier [181 KB ]
- Siliconix [93 KB ]
- Harris Semiconductor [88 KB ] Representative Datasheet, MFG may vary
5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Features:
Package: TO-220
5.6A, 100V
rDS(ON)= 0.540Ω
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
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This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Features:
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No specifications are available at this time. Call for more information.
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