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Transistor 2N3251 Bipolar PNP -40V -200mA TO-18

New Jersey Semiconductor
2N3251

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40V 0.5A Bipolar PNP Transistor TO-18

Specifications

  • Bipolar (BJT) transistor
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 0.1mA, 1V
  • Power - Max: 360mW
  • Frequency - Transition: 300 MHz
  • Operating Temperature: -65°C to 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-18-3 Metal Can


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Specification Value
Supplier PackageTO-18-3
Transistor PolarityPNP
Maximum Collector Emitter Voltage40V
Maximum Collector Base Voltage50V
Minimum DC Current Gain80 @ .001A
Maximum Power Dissipation1.2W
ConfigurationSingle
Maximum Collector Emitter Saturation Voltage[email protected]
Number of Elements per Chip1
Output Power1.2W
CategoryBipolar Small Signal
Maximum Emitter Base Voltage-5V
Maximum Base Emitter Saturation Voltage[email protected]
Maximum Operating Frequency300Mhz
Maximum DC Collector Current-200mA
Minimum Operating Temperature-65°C
Maximum Operating Temperature200°C
MountingThrough Hole
PackagingBulk
Pin_Count3
Family2N3251
Product Width5.8mm
Product Height5.3mm
Product Length5.8mm
Product TypeGP BJT


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