Motorola 2N3251A General Purpose Transistors

Bipolar Transistor (BJT) PNP 60V 200mA 360mW Through Hole TO-39 (TO-205AD)

Features

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 200 mA
• Voltage - Collector Emitter Breakdown (Max): 60 V
• Vce Saturation (Max) @ Ib, Ic: 500 mV @ 5 mA, 50 mA
• Current - Collector Cutoff (Max): 10 uA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10 mA, 1 V
• Power - Max: 360 mW
• Frequency - Transition: N/A
• Operating Temperature: -65°C to 200°C (TJ)
• Mounting Type: Through Hole
• Package: TO-205AD, TO-39-3 Metal Can

Overview

Bipolar Transistor (BJT) PNP 60V 200mA 360mW Through Hole TO-39 (TO-205AD).