National Semiconductor 2N3417 General Purpose Transistors

Bipolar Transistor (BJT) NPN 50V 500mA 625mW Through Hole TO-92-3

Features

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 500 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Vce Saturation (Max) @ Ib, Ic: 300 mV @ 3 mA, 50 mA
• Current - Collector Cutoff (Max): 100 nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2 mA, 4.5 V
• Power - Max: 625 mW
• Frequency - Transition: N/A
• Operating Temperature: -55°C to 150°C (TJ)
• Mounting Type: Through Hole
• Package: TO-226-3, TO-92-3 (TO-226AA)

Overview

Bipolar Transistor (BJT) NPN 50V 500mA 625mW Through Hole TO-92-3.