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National Semiconductor MPSH10 Bipolar Transistors

  • RF Bipolar (BJT) Transistor NPN 25V 50mA 650MHz 350mW Through Hole TO-92
  • Jameco Part no.: 288930
  • Manufacturer: National Semiconductor
  • Manufacturer p/n: MPSH10
  • HTS code: 8541.29.0095
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# of units Price
10+ $0.15
100+ $0.12
500+ $0.10

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  • Order in multiples of 10

RF Bipolar (BJT) Transistor NPN 25V 50mA 650MHz 350mW Through Hole TO-92

Specifications

  • Transistor Type: NPN
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4 mA, 10 V
  • Frequency - Transition: 650 MHz
  • Operating Temperature: -55°C to 150°C (TJ)
  • Current - Collector (Ic) (Max): 50 mA
  • Voltage - Collector Emitter Breakdown (Max): 25 V
  • Power - Max: 350 mW
  • Mounting Type: Through Hole
  • Package: TO-92


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Specification Value
PackageTO-92-3
Transistor PolarityNPN
Maximum Collector Emitter Voltage25 V
Maximum Collector Base Voltage30 V
Minimum DC Current Gain60 @ 40mA @ 10V
Power Dissipation350mW
ConfigurationSingle
Maximum Collector Emitter Saturation Voltage0.5V @ 4mA @ 0.4mA
Number of Elements per Chip1
Output Power350mW
Product TypeBipolar RF
Maximum Emitter Base Voltage30V
Maximum Base Emitter Saturation VoltageN/A
Maximum Operating Frequency650MHz
Maximum Collector Current50mA
Minimum Operating Temperature-55°C
Maximum Operating Temperature150°C
MountingThrough Hole
Pins3
Manufacturer SeriesN/A
Height5.20 mm
Length5.33 mm


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