Infineon Technologies IRLZ44NPBF MOSFETs Transistors

MOSFET Transistor N-Channel 55V 47A (Tc) 3.8W (Ta) 110W (Tc) Through Hole TO-220AB

Specifications

• Series: HEXFET®
• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55 V
• Current - Continuous Drain (Id) @ 25 °C: 47 A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4 V, 10 V
• Rds On (Max) @ Id, Vgs: 22 mOhm @ 25 A, 10 V
• Vgs(th) (Max) @ Id: 2 V @ 250 µA
• Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
• Vgs (Max): ±16 V
• Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
• Power Dissipation (Max): 3.8 W (Ta), 110 W (Tc)
• Operating Temperature: -55°C to 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB, TO-220-3
• Base Number: IRLZ44