| # of units | Price |
|---|---|
| 1+ | $0.45 |
| 10+ | $0.39 |
| 100+ | $0.15 |
| 500+ | $0.12 |
| 1000+ | $0.10 |
| Specification | Value |
|---|---|
| Package | TO-92-3 |
| Transistor Polarity | N |
| Maximum Drain Source Voltage | 60 V |
| Maximum Continuous Drain Current | 200 mA |
| Maximum Gate Source Voltage | ±20V |
| Power Dissipation | 830 mW |
| Number of Elements per Chip | 1 |
| Maximum Forward Voltage | 60VDC |
| Output Power | 0.83W |
| Peak Non-Repetitive Surge Current | 1.3A |
| Maximum Reverse Current | 10uA |
| Channel Mode | N-Channel Enhancement |
| Peak Reverse Recovery Time | 10ns |
| Channel Type | N |
| Repetitive Peak Reverse Voltage | 40VDC |
| Configuration | Single |
| Maximum Drain Source Resistance | 5 Ohms@10V |
| Category | Small Signal |
| Maximum Forward Current | 300mA |
| Typical Fall Time | 15ns |
| Typical Gate Charge @ Vgs | 30nC@25V |
| Typical Input Capacitance @ Vds | 40pF@10V |
| Typical Rise Time | 10ns |
| Typical Turn-Off Delay Time | 15ns |
| Typical Turn-On Delay Time | 10ns |
| Minimum Operating Temperature | -55°C |
| Maximum Operating Temperature | 150°C |
| Mounting | Through Hole |
| Packaging | Bulk |
| Pins | 3 |
| Family | 2N7000 |
| Width | 4.2 mm |
| Height | 5.2 mm |
| Length | 4.8 mm |
| Product Type | MOSFET |